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Surface potential response from GaP nanowires synthesized with mixed crystal phasesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 июня 2021 г.
- Авторы: Kyeyune B., Soboleva E., Geydt P., Khayrudinov V., Alekseev P., Lipsanen H., Lähderanta E.
- Журнал: Journal of Physics: Conference Series
- Том: 1400
- Год издания: 2019
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 044018
- Последняя страница: 044018
- DOI: 10.1088/1742-6596/1400/4/044018
- Аннотация: In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface potentials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.
- Добавил в систему: Гейдт Павел Викторович