Field-effect transistor with nanowire channel based on heterogeneously doped SOIстатья
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Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.
Авторы:
Amitonov S.V. ,
Presnov D.E. ,
Rudakov V.I. ,
Krupenin V.A.
Журнал:
Russian Microelectronics
Том:
42
Номер:
3
Год издания:
2013
Издательство:
Maik Nauka/Interperiodica Publishing
Местоположение издательства:
Russian Federation
Первая страница:
160
Последняя страница:
164
DOI:
10.1134/S1063739713030025
Аннотация:
The article presents production methods and test results of field-effect transistor based on silicon nanowire made of heterogeneously arsenic-doped silicon on insulator (SOI). Dopant concentration has been varied over the depth of the silicon layer with a depth of 100 nm from higher than 1020 cm−3 to about 1017 cm−3. The field-effect transistor was manufactured from SOI using electron beam lithography and reactive ion etching. The upper highly conducting part of silicon layer has been used as a substrate for input electrodes and contact pads. The lower sublayer has been used for the formation of semiconductor nanowire. The current-voltage and gate characteristics of the transistor have been measured at 77 and 300 K. The possibility of using a field-effect transistor based on silicon nanowire as a highly sensitive local field-effect and charge sensor with nanometric spatial resolution for application in various fields of physics, technology and medicine has been analyzed.
Original Russian Text © S.V. Amitonov, D.E. Presnov, V.I. Rudakov, V.A. Krupenin, 2013, published in Mikroelektronika, 2013, Vol. 42, No. 3, pp. 200–205.
Добавил в систему:
Преснов Денис Евгеньевич