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Influence of the implantation energy with Ar+ ions on the photoluminescence of porous siliconстатья
- Авторы: Kozhemiako A.V., Shemukhin A.A., Nazarov A.V., Spivak Yu M., Muratova E.N., Chernysh V.V.
- Журнал: Moscow University Physics Bulletin
- Номер: 6
- Год издания: 2021
- Издательство: Allerton Press
- Местоположение издательства: New York, N.Y., United States
- Первая страница: 590
- Последняя страница: 595
- DOI: 10.3103/S0027134920060120
- Аннотация: Irradiation of porous silicon with Ar+ ions at energies from 100 to 400 keV and fluence of 1012 cm−2 was carried out. The effect of ion irradiation at different energies of incident particles on the photoluminescence spectrum of porous silicon has been studied. it has been shown that the photoluminescence spectrum consists of two components. One of then is associated with the presence of structural defects; another, with the surface states on the complex surface of porous silicon. A method for estimating the thickness of the luminescent layer based on the analysis of the photoluminescence peak associated with defects is proposed.
- Добавил в систему: Кононина Анастасия Владимировна