|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Determination of mechanical stress in the silicon nitride films with a scanning electron microscopeстатья
- Авторы: Djuzhev N.A., Gusev E.E., Dedkova A.A., Patiukov N.
- Сборник: INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016
- Серия: Proceedings of SPIE
- Том: 10224
- Год издания: 2016
- Место издания: SPIE-INT SOC OPTICAL ENGINEERING [Djuzhev, N. A.; Gusev, E. E.; Dedkova, A. A.; Patiukov, N.] Natl Res Univ Elect Technol, Shokina Sq 1, Moscow 124498, Zelenograd, Russia
- DOI: 10.1117/12.2250118
- Аннотация: A method to measure mechanical stress in thin films was proposed. Method is based on the geometry variance of thin film's fragment after it's been released from substrate. A scanning electron microscope (SEM) was used to measure linear dimensions. Samples were prepared with help of focused ion beam (FIB). Mechanical stress of silicon nitride thin film measured using our method is -1.64 GPa, relative measurement error estimated as 1.2%. Measured value of stress correlates with other method's existing data. Method can be applied to various materials, that are being used in MEMS technology.
- Добавил в систему: Дедкова Анна Александровна