Аннотация:Abstract. This paper presents the results of high-performance atomistic modeling of heating and the initial stage of evaporation of thin silicon dioxide films under the action of high-power laser radiation. Both dense isotropic films
obtained by normal deposition and highly porous anisotropic silicon dioxide films obtained by deposition at a large angle to the substrate are investigated. The dependence of the initial stage of film evaporation on its structural properties
is analyzed.