Photoreflectance Spectroscopy of Electron-Hole States in a Graded-Width GaAs/InGaAs/GaAs Quantum Wellстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Авторы:
Avakyants L.P. ,
Bokov P.Y. ,
Glazyrin E.V. ,
Kazakov I.P.,
Chervyakov A.V.
Журнал:
Semiconductors
Том:
45
Номер:
3
Год издания:
2011
Издательство:
Springer
Местоположение издательства:
New York
Первая страница:
320
Последняя страница:
324
DOI:
10.1134/S1063782611030043
Аннотация:
The spectrum of electron-hole states in a GaAs/In0.5Ga0.5As quantum well with a width graded in the range from 1.1 to 3.6 nm is studied by photoreflectance spectroscopy. The energies of the size-quantization levels of electrons and holes are calculated taking into account the strain-induced changes in the band structures of the quantum well. It is shown that the best fit of the experimental data to the results of calculations is attained if the ratio between the offset of the conduction band and that of the valence band at the heterojunction is Q = ΔEc/ΔEv = 0.62/0.38. A photoreflectance signal is detected in the region of the shadow of modulating radiation beam at a spacing between the spots produced by probing and modulating radiation shorter than 6 mm. © 2011 Pleiades Publishing, Ltd.
Добавил в систему:
Боков Павел Юрьевич