Photoreflection studies of band offsets at the heterojunction in strained short-period GaAs/GaAsP superlatticesстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Авторы:
Avakyants L.P. ,
Bokov P.Yu ,
Kolmakova T.P.,
Chervyakov A.V.
Журнал:
Semiconductors
Том:
38
Номер:
12
Год издания:
2004
Издательство:
Springer
Местоположение издательства:
New York
Первая страница:
1384
Последняя страница:
1389
DOI:
10.1134/1.1836057
Аннотация:
Energies of band-to-band transitions with the involvement of the quantum-confinement subbands are determined from the photoreflection spectra of the strained short-period GaAs/GaAs0.6P0.4 superlattice. Strains caused by the mismatch of the crystal lattice in the GaAs and GaAs 0.6P0.4 layers are calculated on the basis of the observed shift of the fundamental-transition energy in GaAs0.6P 0.4. Positions of minibands in the superlattice are simulated in relation to the potential jump at the heteroboundary; the Kronig-Penney model is used in the calculations. Comparison of the results of simulation with experimental data shows that the studied superlattice is of type I with weakly localized electrons and light holes. The potential jump at the heteroboundary in the conduction band amounts to ΔEc/ΔEg = 0.15. © 2004 MAIK "Nauka/Interperiodica".
Добавил в систему:
Боков Павел Юрьевич