|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
The built-in electric field in P-HEMT heterostructures with near-surface quantum wells Al xGa 1-xAs/In yGa 1-yAs/GaAsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 24 мая 2016 г.
- Авторы: Khabibullin R.A., Vasil’evskii I.S., Ponomarev D.S., Galiev G.B., Klimov E.A., Avakyanz L.P., Bokov P.Yu, Chervyakov A.V.
- Журнал: Journal of Physics: Conference Series
- Том: 345
- Номер: 1
- Год издания: 2012
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 012015
- DOI: 10.1088/1742-6596/345/1/012015
- Аннотация: This study is concerned with the built-in electric field of heterostructures with the quantum wells grown at different depths L b with respect to the surface. All samples had the same concentration of the two-dimensional electron in the quantum wells AlGaAs/InGaAs/GaAs. The built-in electric field was determined from the photoreflectance spectra of the samples. In case of L b decreasing, the intensity ratio of two peaks in the photoluminescence spectra increases. The calculation shows that occurred effect originates from the redistribution of doping atom and variation of the surface potential due to the fact that the quantum well is set closer to the surface.
- Добавил в систему: Боков Павел Юрьевич