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Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopyстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 апреля 2017 г.
- Авторы: Avakyants L.P., Aslanyan A.E., Bokov P.Yu, Chervyakov A.V., Polozhentsev K.Yu
- Журнал: Solid-State Electronics
- Том: 130
- Номер: 4
- Год издания: 2017
- Издательство: Pergamon Press Ltd.
- Местоположение издательства: United Kingdom
- Первая страница: 45
- Последняя страница: 48
- DOI: 10.1016/j.sse.2017.01.008
- Аннотация: Nitride-based heterostructures with InGaN/GaN multiple quantum wells in active region were investigated by electroreflectance spectroscopy. Two spectral lines with the stable difference between their phase parameters and slightly different energies were observed in the electroreflectance spectra under various bias voltages. Using models taking into account interference effects it was shown that electroreflectance signal at low amplitude of modulation voltage originates from the first and the last quantum wells in active region. The difference between built-in electric field strengths in these two quantum wells were estimated as 270 – 320 kV/cm.
- Добавил в систему: Боков Павел Юрьевич