Аннотация:Josephson structures with a ferromagnetic layer are of great interest nowadays due to oscillating nature of superconductive proximity effect which provides large amount of application as an element of a superconducting memory. Unfortunately, conventional SFS junctions demonstrates characteristic voltage ICRN much smaller than tunnel SIS junctions mostly used in superconductive electronics. It leads to deficient value of characteristic frequency ωC and to difficulties in integration with rapid Josepjson-based circuits. The development of S-IsF-S structures with complex interlayer solved this problem. Experimental data shows, that such structure demonstrates product up to 300 mV keeping the magnetic properties. However, to date, theoretical analysis of such structures is not performed. The purpose of this work is to develop a microscopic theory, which gives the dependence of the characteristic voltage of S-IsF-S Josephson device on temperature, a ferromagnetic exchange energy, transport properties of interfaces, thickness of superconducting and ferromagnetic layers. Special attention will be given to determining the relation between the supercurrent across a S-IsF-S junction and the difference between the phases of the order parameters of superconducting banks.
