Galvanomagnetic properties and electronic structure of Pb1-x-ySnxVyTe under pressureстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:We study the galvanomagnetic properties in weak magnetic fields (4.2 <= T <= 300 K, B <= 0.07 T) and the Shubnikov-de Haas effect (T = 4.2 K, B <= 7 T) in single crystal Pb1-x-ySnxVyTe alloys under variation of alloy composition (x = 0.05-0.20, y <= 0.01) and hydrostatic compression up to 15 kbar. The increase of vanadium impurity content leads to the p-n-conversion and to a transition in the insulating phase due to the pinning of Fermi level by the donor-type deep vanadium impurity level situated under the bottom of the conduction band. We found that pressure induces a decrease of the activation energy of the vanadium level, the n-p-inversion of the conductivity type at low temperatures and an insulator-metal transition. In the metallic phase, a sharp increase of the Hall mobility (up to 3 x 10(5) cm(2) V-1 s(-1)) and appearance of Shubnikov-de Haas oscillations are observed at helium temperature. The pressure and temperature coefficients of vanadium deep level energy are determined, and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure is proposed.