Vanadium deep impurity level in diluted magnetic semiconductors Pb1-x-ySnxVyTeстатья
Информация о цитировании статьи получена из
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) in Pb1–x–ySnxVyTe alloys (x = 0.05–0.21, y ≤ 0.015) are studied. It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal–insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the Pb1–x–ySnxVyTe alloy upon varying the host composition is suggested.