|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Free carriers' dynamics in the bulk of silicon under mid-IR femtosecond laser excitationстатья
- Авторы: Lvov K.V., Mareev E.I., Stremoukhov S.Yu, Potemkin F.V.
- Журнал: IEEE Xplore
- Год издания: 2022
- DOI: 10.1109/iclo54117.2022.9839760
- Аннотация: Results of numerical simulation of free carriers' dynamics in the conduction band under femtosecond laser excitation in the mid-IR range (4.6 μm) in the bulk of silicon are presented. The electrons heating up to 8 eV which significantly exceeds the band gap is shown. The promotion of supercritical carrier concentration (8.5.1021 cm−3) is demonstrated. These are critical to achieve the energy threshold (4.2 kJ/cm3) for melting silicon crystal lattice.
- Добавил в систему: Стремоухов Сергей Юрьевич