Study of structural characteristics of ferromagnetic silicon implanted with manganeseстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The structure of manganese-implanted (dose 2 x 10(16) cm(-2)) n-type and p-type silicon, ferromagnetic at room temperature, has been studied. During implantation, an amorphized layer is formed in the silicon wafer. Subsequent vacuum annealing improves the structural quality of the implanted material and leads to the formation of a vacancy solid solution of manganese in silicon. A difference in the degree of structural quality of silicon implanted by different impurities has been experimentally established.