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Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistorстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 13 февраля 2018 г.
- Авторы: Trifonov A.S., Presnov D.E., Bozhev I.V., Evplov D.A., Desmaris V., Krupenin V.A.
- Журнал: Ultramicroscopy
- Том: 179
- Год издания: 2017
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 33
- Последняя страница: 40
- DOI: 10.1016/j.ultramic.2017.03.030
- Аннотация: We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10^−3 e/Hz^−1/2 at room temperature.
- Добавил в систему: Трифонов Артем Сергеевич