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Measurement of local optomechanical properties of a direct bandgap 2D semiconductorстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Benimetskiy F.A., Sharov V.A., Alekseev P.A., Kravtsov V., Agapev K.B., Sinev I.S., Mukhin I.S., Catanzaro A., Polozkov R.G., Alexeev E.M., Tartakovskii A.I., Samusev A.K., Skolnick M.S., Krizhanovskii D.N., Shelykh I.A., Iorsh I.V.
- Журнал: APL Materials
- Том: 7
- Номер: 10
- Год издания: 2019
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 1
- Последняя страница: 5
- Номер статьи: 101126
- DOI: 10.1063/1.5117259
- Аннотация: Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows inducing modulation of exciton potential and, ultimately, creating single-photon emitters at desired positions. The performance of such systems is critically dependent on the exciton energy profile and maximum possible exciton energy shift that can be achieved under local impact until the monolayer rupture. Here, we study the evolution of two-dimensional exciton energy profile induced in a MoSe2 monolayer under incremental local indentation until the rupture. We controllably stress the flake with an atomic force microscope tip and perform in situ spatiospectral mapping of the excitonic photoluminescence in the vicinity of the indentation point. In order to accurately fit the experimental data, we combine numerical simulations with a simple model of strain-induced modification of the local excitonic response and carefully account for the optical resolution of the setup. This allows us to extract deformation, strain, and exciton energy profiles obtained at each indentation depth. The maximum exciton energy shift induced by local deformation achieved at 300 nm indentation reaches the value of 36.5 meV and corresponds to 1.15% strain of the monolayer. Our approach is a powerful tool for in situ characterization of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response.
- Добавил в систему: Коновко Андрей Андреевич