HREM characterisation of interfaces in YBa2Cu3O7−δ/CeO2/R-Al2O3 structures

Авторы: Zandbergen H.W., Connolly E., Graboy I.E., Svetchnikov V.L., Kaul A.R.
Журнал: Physica C: Superconductivity and its Applications
Том: 329
Номер: 1
Год издания: 2000
Издательство: Elsevier BV
Местоположение издательства: Netherlands
Первая страница: 37
Последняя страница: 44
DOI: 10.1016/s0921-4534(99)00538-9
Аннотация: Interfaces between a sapphire (R-Al2O3) substrate, a CeO2 buffer layer, and a YBa2Cu3O7−δ (YBCO) layer — both layers obtained by MOCVD — have been studied by high-resolution electron microscopy. Lattice parameter mismatch between the sapphire substrate and the CeO2 layer was observed to be accommodated within the first one or two atomic planes of the CeO2 layer. The density of misfit dislocations correlated well with the mismatch between the CeO2 and sapphire unit cell parameters. Small imperfections in the sapphire surface were observed not to lead to a change in orientation of the overlying CeO2 layer, nor to an increased roughness of the CeO2 surface. The roughness of the CeO2 surface was found to be considerably less than that of the sapphire surface. The YBCO/CeO2 interface contained only a small number of dislocations, located in the YBCO layer. Steps in the CeO2 surface were observed to be accommodated by antiphase boundaries, or planar defects close to the interface.
Добавил в систему: Грабой Игорь Эдвинович

	ИСТИНА	Войти в систему Регистрация
	ИСТИНА ЦЭМИ РАН
	Главная Поиск Статистика О проекте Помощь

ИСТИНА