The Influence of the Formation and Storage Conditions of Silicon Nanoparticles Obtained by Laser-Induced Pyrolysis of Monosilane on the Nature and Properties of Defectsстатья
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Дата последнего поиска статьи во внешних источниках: 14 августа 2017 г.
Аннотация:Silicon nanoparticles (NPs) obtained by laserinduced
pyrolysis of monosilane were investigated for
the first time by the method of EPR spectroscopy so as
to study the variation of recombination centers in the
process of sample storage. Both original NPs and ones
etched in an aqueous solution of HF and HNO3 acid,
followed by annealing at 80C for 60 min, which leads
to stable high-intensity photoluminescence, were
studied. The results of the experiments and the subsequent
computer processing showed that, in all the presented
samples, there are three types of defects—Pb0,
Pb1, and D-centers. The role of defects as quenching
centers of luminescence has been confirmed during
comparative studies of samples after 1 year of storage.
It has been established that the storage of etched NPs
leads to passivation of dangling bonds with oxygen,
resulting in a significant reduction of defect concentration
with time. The obtained results are of paramount
importance for practical applications of silicon
NPs obtained by the above method, because a possibility
is opened up for synthesis of structures with low
concentrations of defects and stable radiative characteristics.