|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric fieldстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Dobrovolsky A.A., Komissarova T.A., Dashevsky Z.M., Kassiyan V.A., Akimov B.A., Ryabova L.I., Khokhlov D.R.
- Журнал: Semiconductors
- Том: 43
- Номер: 2
- Год издания: 2009
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 253
- Последняя страница: 256
- DOI: 10.1134/S1063782609020249
- Аннотация: Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2-300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled glass substrate and then annealed in an oxygen atmosphere at temperatures of 300 and 350A degrees C. The charge-carrier transport in the studied films is controlled by charge transport over inversion channels at the surface of grains and by transitions through barriers at the grain boundaries. Parameters (resistance and capacitance) corresponding to each of above-mentioned mechanisms were determined. Dominant contribution to conductance of the film annealed at 350A degrees C is made by inversion channels. It is shown that the transport of charge carriers over inversion channels in the region of low temperatures is realized by hopping conductivity.
- Добавил в систему: Рябова Людмила Ивановна