Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

Shibanov, D.R.; Lopaev, D.V.; Zyryanov, S.M.; Zotovich, A.I.; Maslakov, K.I.; Rakhimov, A.T.

Авторы: Shibanov D.R., Lopaev D.V., Zyryanov S.M., Zotovich A.I., Maslakov K.I., Rakhimov A.T.
Журнал: Journal of Applied Physics
Том: 134
Номер: 6
Год издания: 2023
Издательство: AIP Publishing
Местоположение издательства: United States
Первая страница: 1
Последняя страница: 15
Номер статьи: 063304
DOI: 10.1063/5.0160531
Аннотация: Atomic layer plasma technologies require localizing ions’ impact within nanometers up to an atomic layer. The possible way to achieve thisis the decrease in the ion energy up to surface binding energy. At such low ion kinetic energies, the impact of different plasma effects,causing the surface modification, can be of the same order as kinetic ones. In this work, we studied the sputtering of amorphous siliconfilms by Ar+, Kr+, and Xe+ ions at energies of 20–200 eV under the low-pressure inductively coupled plasma discharge in pure argon,krypton, and xenon, respectively, at a plasma density of 1–1.5 × 1010 cm−3. Under the plasma conditions, a high asymmetry of dischargeallowed to form ion flux energy distribution functions with narrow energy peak (5 ± 2 eV full width at half maximum). Real time in situcontrol over the ion composition and flux as well as the sputtering rate (the ratio of the film thickness change to the sputtering time) providedaccurate determination of the sputtering yields Y(Ei). It is shown that at ion energy above ∼70 eV, the “classical” kinetic sputteringmechanism prevails. In this case, Y(Ei) grows rather rapidly with ion energy, increasing with the decrease in the ion mass: the closer the ionmass to the target atom mass, the higher the Y(Ei). Below 70 eV, the growth of Y(Ei) strongly slows down, with Y(20 eV) being still high(>10^−3), indicating the impact of plasma. The obtained trends of Y(Ei) are discussed in light of surface modification studied by atomic forcemicroscopy and angular x-ray photoelectronic spectroscopy.
Добавил в систему: Шибанов Даниил Романович

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