|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Near surface layer evolution in Zn+ ions implanted Si upon annealing treatmentsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 4 апреля 2014 г.
- Авторы: Saraykin V.V., Shcherbachev K.D., Petrov D.V., Privezentsev V.V.
- Журнал: Applied Surface Science
- Том: 267
- Год издания: 2013
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 97
- Последняя страница: 100
- DOI: 10.1016/j.apsusc.2012.08.006
- Аннотация: The damaged layer in Zn implanted n-type CZ-Si(100) substrates was investigated by a secondary ion mass-spectrometry (SIMS), an X-ray diffraction (XRD) and an atomic force microscopy (AFM). The substrates were implanted with Zn-64(+) ions at an energy of 100 keV and an ion dose of 2 x 10(16) cm(-2) with subsequent annealing at 400, 600, 700, 800, 900 and 1000 degrees C for 60 min in neutral/inert and oxygen atmosphere. A significant redistribution of Zn atoms in the damaged layer caused by the thermal annealing was found by SIMS. Zn concentration maximum exceeds a Zn solubility limit in Si; therefore, a decomposition of Zn solid solution in Si resulting in formation of zinc-containing phases in the surface layer should be expected. In an as-implanted state, the amorphous layer with thickness about 100 nm, which located inside of a substrate on the depth more than value Rp, is formed. After thermal annealing at 800 degrees C nanoparticles on the sample surface were revealed. After 1000 degrees C annealing the radiation-induced defects completely disappeared, and Zn implanted atoms are revealed in the near surface layer. (C) 2012 Elsevier B. V. All rights reserved.
- Добавил в систему: Воронина Екатерина Николаевна