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Zn-Containing Clusters Formation in an Implanted Si3N4/Si Filmстатья
- Авторы: Tereshchenko A.N., Privezentsev V.V., Firsov A.A., Kulikauskas V.S., Zatekin V.V., Voronova M.I.
- Журнал: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
- Том: 17
- Номер: 6
- Год издания: 2023
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 1232
- Аннотация: The results of the synthesis of nanoclusters of metallic zinc and its oxide in Si3N4 film on Si substrate implanted by 64Zn+ ions with a dose of 5×1016/cm2 and energy of 40keV and, than annealed in oxygen atmosphere (in air) with a step of 100°C for 1 h at each step in the temperature range of 400-800°C are presented. Scanning electron microscopy combined with energy-dispersive spectroscopy, and photoluminescence were used for the study. It was found that after implantation, individual nanoclusters (NCs) of metallic zinc less than 1 µm in size were fixed on the surface and in the near-surface layer of Si3N4 film. It has been established that, during annealing, the sample undergoes a transition from the phase of metallic Zn to the phases of its oxide ZnO and silicide Zn2SiO4. After annealing at 700°C, which is the most optimal for obtaining the ZnO phase, zinc oxide NCs with a size of less than 500nm are formed in the Si3N4 film. In this case, a PL peak at a wavelength nerby 370 nm is formed in the PL spectrum due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degrades and the zinc silicide phase Zn2SiO4 is formed.
- Добавил в систему: Куликаускас Вацловас Станиславович