Аннотация:Images with nanoscale resolution were obtained in both transmission and reflection modes using a full-field microscope that is illuminated by an extremely compact λ = 46.9 nm (hν; = 26.4 eV) soft x-ray laser. The microscope was used to image the surface of partially processed silicon semiconductor chips containing periodic patterns of polysilicon and metal lines. To characterize the microscope, modulation transfer functions were experimentally built for three different objective zone plates, and images with near-wavelength resolution were obtained.