Specific character of the 119sn thin films growth on amorphous si by the cbpld methodстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 15 февраля 2024 г.
Аннотация:The research of the 119Sn thin films growth on amorphous Si that is important for the multilayer periodical spin-tunnel nanostructures creation have been investigated in this paper. The 119Sn mono-isotopic thin films on the silicon substrates (100) had been received by crossed-beam pulsed laser deposition method (CBPLD). Similarly the [Fe/Si/Sn/Si] multilayer periodical structures have been deposited. The received samples were investigated by atomic-force microscopy, electronic microscopy and X-ray reflectometry methods. It has been established that at 119Sn film thickness up to 3 nm it is possible to received atomic-smooth surfaces with 0.5 nm roughness