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Photoluminescence properties of thin nitrogen- and phosphorus-doped zno films fabricated using pulsed laser depositionстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 15 февраля 2024 г.
- Авторы: Parshina L.S., Novodvorsky O.A., Panchenko V.Y., Khramova O.D., Cherebilo Y.A., Lotin A.A., Wenzel C., Trumpaicka N., Bartha J.W.
- Журнал: Laser Physics
- Том: 21
- Номер: 4
- Год издания: 2011
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 790
- Последняя страница: 795
- DOI: 10.1134/S1054660X11080019
- Аннотация: The production of n- and p-type high-quality film structures is a foreground task in tackling the problem of growing the light-emitting p-n junctions based on zinc oxide. The ZnO:N and ZnO:P thin-film samples are produced from ceramic targets using the pulsed laser deposition. Zn 3N2, MgO, and Zn3P2 are introduced in the ZnO ceramic targets for the fabrication of the p-type ZnO films. Gases O2 and N2O are used as buffer gases. The thermal annealing of the ZnO films is employed. The resistance and photoluminescence (PL) spectra of the ZnO films are measured prior to and after annealing. The dependence of the ZnO PL peak amplitude and position prior to and after annealing on the level of doping with nitrogen and phosphorus is established. The PL characteristics of the films are studied at cw optical excitation using a He-Cd laser with a radiation wavelength of 325 nm. The PL spectra in the interval 300-700 nm are recorded by an HR4000 Ocean Optics spectrometer in the temperature range 10-400 K...
- Добавил в систему: Панченко Владислав Яковлевич