Место издания:Institute of Physics and Technology of the RAS,
Первая страница:P1-22
Аннотация:We investigated the local electronic properties of oxidized NiNb amorphous films using contact mode of
atomic force microscopy. Two types of samples were measured: natural oxide with thickness ~ 4 nm (type 1)
and artificially oxidized film with thickness ~ 15 nm (type 2). All samples showed non-linear asymmetric
local current-voltage characteristics at tip loading up to 500 nN. The samples of type 1 have electron
conductivity whereas samples of type 2 demonstrated hole-type conductivity.