Features of Magnetoresistance of Straintronics Element in the Presence of Bistable Magnetic States

Zhukov, D.A.; Polyakov, O.P.; Polyakov, P.A.; Kasatkin, S.I.; Amelichev, V.V.; Kostyuk, D.V.

Авторы: Zhukov D.A., Polyakov O.P., Polyakov P.A., Kasatkin S.I., Amelichev V.V., Kostyuk D.V.
Журнал: Physics of Metals and Metallography
Том: 125
Номер: 10
Год издания: 2024
Издательство: Pleiades Publishing, Inc.
Местоположение издательства: New York, USA
Первая страница: 1072
Последняя страница: 1080
DOI: 10.1134/s0031918x24601124
Аннотация: The paper presents the findings of a study investigating the dependence of the magnetoresistance of amagnetic straintronics element comprising a multilayer film nanostructure of Ta (5 nm)/FeNiCo (20 nm)/CoFe(10 nm)/Ta (5 nm) layers, successively sputtered on a silicon substrate, on the strength of the external remagnetization magnetic field and compression stress. It has been established that the experimental value of themaximum change in the magnetoresistance of the nano-structure at remagnetization of layers is less than thetheoretical value. This discrepancy can be attributed to the random character of the orientational phase transition of the bistable magnetic system in proximity of the critical value of the external magnetic field. A variational method of theoretical approximation of magnetoresistance dependences has been developed, whichenables determining unknown parameters of magnetic nanolayers from experimental data, for example, theHan anisotropy field and Hσ magnetostriction field. The developed theory is shown to be in quantitativeagreement with experimental results.
Добавил в систему: Поляков Петр Александрович

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Features of Magnetoresistance of Straintronics Element in the Presence of Bistable Magnetic Statesстатья

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