Dipolar electron-hole liquid in a double-well SiGe/Si heterosystemстатья
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Дата последнего поиска статьи во внешних источниках: 27 января 2018 г.
Аннотация:The transition from a dipolar to a spatially direct electron-hole liquid in two-dimensional layers of a type-II (buffer Si1-y Ge y )/tSi/sSi1-x Ge x/tSi/(cap Si1-y Ge y ) heterostructure is investigated by photoluminescence spectroscopy at liquid-helium temperatures at high excitation levels. The transition takes place upon a reduction of the thickness of the sSi1-x Ge x layer, which forms a quantum well for holes in the valence band and a barrier in the conduction band separating the electron quantum wells (tSi layers). The main characteristics of both types of electron-hole liquid are determined. The lifetime of dipolar excitons is determined from photoluminescence kinetics measurements.