Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistorстатья
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Дата последнего поиска статьи во внешних источниках: 8 декабря 2015 г.
Аннотация:An electron transport through the extremely small gaps (1–5 nm wide) formed in narrow and thin gold
nanowires by the electromigration method is studied in this work at various temperatures. A careful investigation of the final stage of a gap formation has shown a quantum character of a nanowire conductivity on this stage. Analysis of the electron transport characteristics through the resulting
gaps was carried out. It shows that regimes of both a direct tunneling between electrodes and a “cold” emission into a barrier region were realized. Significant reduction of electron work function for gold electrodes of prepared gaps is revealed.