Single-Electron Transistor With Island Formed by Several Dopant Phosphorus Atomsстатья
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Дата последнего поиска статьи во внешних источниках: 4 января 2018 г.
Авторы:
Dagesyan S.A. ,
Shorokhov V.V. ,
Presnov D.E. ,
Soldatov E.S. ,
Trifonov A.S. ,
Krupenin V.A. ,
Snigirev O.V.
Журнал:
Moscow University Physics Bulletin
Том:
72
Номер:
5
Год издания:
2017
Издательство:
Allerton Press
Местоположение издательства:
New York, N.Y., United States
Первая страница:
474
Последняя страница:
479
DOI:
10.3103/S0027134917050058
Аннотация:
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (~ 20 MeV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only.
Original Russian Text © S.A. Dagesyan, V.V. Shorokhov, D.E. Presnov, E.S. Soldatov, A.S. Trifonov, V.A. Krupenin, O.V. Snigirev, 2017, published in Vestnik Moskovskogo Universiteta, Seriya 3: Fizika, Astronomiya, 2017, No. 5, pp. 32–38.
http://vmu.phys.msu.ru/abstract/2017/5/17-5-032/
Добавил в систему:
Преснов Денис Евгеньевич