|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Transfer and deposition of carbon-and nitrogen-containing radicals and ions produced by glow discharge in hydrogen/methane/nitrogen mixturesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 3 декабря 2017 г.
- Авторы: Gorodetskii A.E., Zalavutdinov R.Kh, Bukhovets V.L., Zakharov A.P., Razdobarin G.T., Mukhin E.E., Semenov V.V.
- Журнал: Protection of Metals
- Том: 44
- Номер: 6
- Год издания: 2008
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 542
- Последняя страница: 547
- DOI: 10.1134/S0033173208060027
- Аннотация: Transfer and deposition of the decomposition products of a dc glow discharge with hollow cathode in a hydrogen/methane flow are discussed. Hydrocarbon (a-C:H) films were deposited at inner surfaces of the hollow cathode and quartz tube bounded the discharge. The carbon deposition rate in the hollow cathode was 3-10 times higher than in the positive column and in afterglow range. Acetylene, ethylene, and ethane prevailed in the plasma-reaction gaseous products. When molecular nitrogen was introduced to the near-cathode plasma at a flow rate equal to or higher than that of methane, the carbon deposition rate at the cathode inner surfaces dropped down by 1.5 to 2 orders of magnitude. The carbon that has been consumed in the a-C:H films formation in the cathode is now transformed mainly to hydrogen cyanide (HCN). The carbon deposition rate in the positive column and in afterglow range (T = 300 K) were comparable with those in the H(2)/CH(4) mixture. In the a-C/N:H deposits, the nitrogen concentration was 15 to 25 at %. The experiments showed that nitrogen can be used as a component of the gas flow specially introduced near the mirror in protecting the optical surfaces in diagnostic channels of the ITER tokamak against a-C:H film deposition.
- Добавил в систему: Залавутдинов Ринад Харисович