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Deposition of Y-Ba-Cu-O films on silicon substratesстатья
- Авторы: Akimov A.G., Kozikov S.A., Krigel V.G., Khodan A.N., Zhekikhin A.N., Bagratashvili V.N.
- Сборник: Proceedings of SPIE - 1st Intl School on Laser Surface Microprocessing
- Том: 1352
- Год издания: 1990
- Первая страница: 84
- Последняя страница: 94
- Аннотация: The synthesis of HTS films on bare silicon substrates is restrained by interaction between the oxides being deposited and silicon. The formation of a barium silicate layer distorts the composition of the deposited film and imposes no appreciable limitation on the diffusion of silicon from the substrate. The kinetics of the solid-state reactions between the Y-Ba-Cu-O oxide films and silicon substrates in the temperature range 1000-1200 K suffer no restriction from a Si 3 N 4 layer present on the Si substrate, so the use of Si 3 N 4 to form a barrier layer is inadvisable.
- Добавил в систему: Ходан Анатолий Николаевич