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On possible reactions between boron carbide and silicon at elevated temperaturesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 10 августа 2018 г.
- Авторы: Yurkov Andrey, Naschokin Anton, Malakho Artem, Avdeev Victor
- Журнал: Materials Letters
- Том: 216
- Год издания: 2018
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 185
- Последняя страница: 188
- DOI: 10.1016/j.matlet.2018.01.028
- Аннотация: Ternary compounds like B5SiC2 and B3Si2C2 as products of reaction between B4C and silicon were proposed to exist in early investigations. According to the recent publications the products of high temperature reaction are SiC and the ternary phase(s) BxCyCz. The crystals of the newly appearing ternary phase(s) have relatively big dimensions (10–20 μm), rather strict crystal facets. Twinning may be frequent for these phases. According to energy dispersive and wavelength dispersive spectroscopy the composition of these crystals tends to B3Si2C2, their diffraction lines are similar to those of BxSiyCz phase, described earlier.
- Добавил в систему: Нащокин Антон Владимирович