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Rearrangement of electronic structure of Pb1-x-ySnxVyTe under pressureтезисы доклада
- Авторы: Skipetrov E.P., Golovanov A.N., Kovalev B.B., Mousalitin A.M., Slynko E.I., Slynko V.E.
- Сборник: Abstracts 23nd AIRAPT International Conference on High Pressure Science and Technology
- Тезисы
- Год издания: 2011
- Место издания: Mumbai, India
- Первая страница: 216
- Аннотация: In order to obtain the dependencies of vanadium level position in the alloys, doped with vanadium, on the matrix composition and on the pressure in the present work the galvanomagnetic properties (T=4.2-300 K, B<7 T) of Pb1-x-ySnxVyTe (x=0.05-0.20, y≤0.01) at atmospheric pressure and under hydrostatic compression up to 15 kbar have been studied. It was shown that introducing of vanadium in p-Pb1-xSnxTe alloys leads to the decrease in the free hole concentration, p-n-conversion of the conductivity type and metal-insulator transition in the heavily doped alloys. Under pressure an activation energy of the deep vanadium level, determined from the slope of the temperature dependencies of resistivity ρ(1/T), decreases almost linearly, where as the n-p-inversion of the Hall coefficient sign at low temperatures takes place. Obtained experimental results were discussed in the frame of the model, assuming redistribution of electrons between the deep vanadium level and valence band under pressure. The diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure was constructed.
- Добавил в систему: Скипетров Евгений Павлович