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Статьи в журналах
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- 2025 Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE
- Butenko PN, Pechnikov AI, Boiko ME, Guzilova LI, Krymov VM, Shapenkov SV, Sharkov MD, Soshnikov IP, Nikolaev VI
- в журнале Materialia, издательство Elsevier Ltd (London), том 102415 DOI
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- 2022 Au-catalyzed lateral Ga(In)AsP nanostructures grown in a quasi-closed cell
- Vlasov A.S., Karlina L.B., Ber B.Ya, Bert N.A., Boiko M.E., Kazantsev D.Y., Levin A.A., Smirnov A.B., Smirnova I.P., Soshnikov I.P.
- в журнале Materials Today Communications, издательство Elsevier Ltd. (Amsterdam, Netherlands), том 31, № 103232
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- 2018 Properties of SiC Films Obtained by the Method of Substitution of Atoms on Porous Silicon
- Kidalov V.V., Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Soshnikov I.P., Boiko M.E., Sharkov M.D., Dyadenchuk A.F.
- в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 7, № 4, с. 158-160 DOI