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Статьи в журналах
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- 2015 OPTICALLY ADDRESSABLE SILICON VACANCY-RELATED SPIN CENTERS IN RHOMBIC SILICON CARBIDE WITH HIGH BREAKDOWN CHARACTERISTICS AND ENDOR EVIDENCE OF THEIR STRUCTURE
- Soltamov V.A., Tolmachev D.O., Babunts R.A., Badalyan A.G., Davydov V.Yu, Mokhov E.N., Baranov P.G., Yavkin B.V., Orlinskii S.B., Проскуряков И.И.
- в журнале Physical Review Letters, издательство American Physical Society (United States), том 115, № 24, с. 247602