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Статьи в журналах
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- 2019 Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus S3N4 Embedding as an Alternative to Impurity Doping
- König Dirk, Wilck Noël, Hiller Daniel, Berghoff Birger, Meledin Alexander, Giovanni Di Santo, Petaccia Luca, Mayer Joachim, Smith Sean, Knoch Joachim
- в журнале Physical Review Applied, том 12, № 5, с. 054050 DOI