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Статьи в журналах
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- 2008 Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H
- Nguyen Phuong, Bourdelle K.K., Aulnette C., Lallement F., Daix N., Daval N., Cayrefourcq I., Letertre F., Mazuré C., Bogumilowicz Y., Tauzin A., Deguet C., Cherkashin N., Claverie A.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 104, № 11 DOI
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- 2006 Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry
- Villeneuve C., Paillard V., Bourdelle K.K., Cayrefourcq I., Boussagol A., Kennard M.
- в журнале Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, издательство Elsevier BV (Netherlands), том 253, № 1-2, с. 182-186 DOI
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- 2005 Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range
- Nguyen Phuong, Cayrefourcq I., Bourdelle K.K., Boussagol A., Guiot E., Ben Mohamed N., Sousbie N., Akatsu T.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 97, № 8 DOI