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Статьи в журналах
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- 2024 Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation
- Polyakov A.Y., Alexanyan L.A., Schemerov I.V., Vasilev A.A., Chernykh A.V., Ivanov Anton, Talnishnikh Nadezhda, Chernyakov Anton, Zakgeim A.L., Shmidt N.M., Lagov P.B., Doroshkevich A.S., Isayev R.Sh, Pavlov Yu S., Wan Hsiao-Hsuan, Ren Fan, Pearton S.J.
- в журнале APL Materials, издательство AIP Publishing (United States), том 12, № 12, с. 121121 DOI
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- 2018 Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
- Polyakov A.Y., Shmidt N.M., Smirnov N.B., Shchemerov I.V., Shabunina E.I., Tal’nishnih N.A., Lagov P.B., Pavlov Yu S., Alexanyan L.A., Pearton S.J.
- в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 7, № 6, с. 323-328 DOI