Аннотация:Novel TCAD and SPICE models of the Si BJTsand the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD andSPICE device models in radiation-hardened IC design flowwas considered. The complete set of I-V, C-V, fT, fmax ofBJT/HBT characteristics before and after irradiation wassimulated by TCAD and used as input data for SPICE devicemodel parameters extraction. The simulated characteristicscompared with experimental data for Si and SiGe bipolartransistors before and after irradiation have shown 10-20%error in a wide range of fluxes and doses.