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Статьи в журналах
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- 2025 Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE
- Butenko PN, Pechnikov AI, Boiko ME, Guzilova LI, Krymov VM, Shapenkov SV, Sharkov MD, Soshnikov IP, Nikolaev VI
- в журнале Materialia, издательство Elsevier Ltd (London), том 102415 DOI
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- 2023 Carrier Removal Rates in 1.1 MeV Proton Irradiated $\upalpha$-Ga2O3 (Sn)
- Polyakov A.Y., Nikolaev Vladimir, Pechnikov Alexei, Lagov P.B., Shchemerov Ivan V., Vasilev Anton, Chernykh Alexey V., Kochkova Anastasia I., Guzilova Lyubov, Pavlov Yuri S., Kulevoy Timur V., Doroshkevich A.S., Isayev Rafael Sh, Panichkin A.V., Pearton Stephen J.
- в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 56, № 30, с. 305103 DOI
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- 2022 Point defect creation by proton and carbon irradiation of α-Ga2O3
- Polyakov Alexander Y., Nikolaev Vladimir I., Meshkov Igor N., Siemek Krzysztof, Lagov Petr B., Yakimov Eugene B., Pechnikov Alexei I., Orlov Oleg S., Sidorin Alexey A., Stepanov Sergey I., Shchemerov Ivan V., Vasilev Anton A., Chernykh Alexey V., Losev Anton A., Miliachenko Alexandr D., Khrisanov Igor A., Pavlov Yu S., Kobets U.A., Pearton Stephen J.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 132, № 3, с. 035701 DOI